Infineon says its silicon carbide power semiconductors have been selected for Toyota’s new bZ4X battery-electric vehicle.
MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) on Monday unveiled five new 1200-volt silicon carbide power modules designed to drive higher efficiency and lower losses in demanding automotive, ...
Abstract: A novel method for determining the parasitic capacitance of power MOSFETs is proposed. Unlike conventional methods that rely on small-signal measurements under specific bias conditions, the ...
ROHM Semiconductor’s AW2K21 consists of a pair of 30-V N-channel power MOSFETs, configured in a common-source configuration that delivers an on-resistance of just 2.0 mΩ (typ.) in a compact 2.0- × 2.0 ...
ROHM is advancing 4th-gen SiC MOSFETs while prepping for future tech. Credit: RidhamSupriyanto/Shutterstock. ROHM’s 4th generation silicon carbide (SiC) metal-oxide ...
Effective MOSFET/IGBT-device switching depends on the gate driver and its power supply. From power supplies and motor drives to charging stations and myriad other applications, switching power ...
A new technical paper titled “Insights Into Design Optimization of Negative Capacitance Complementary-FET (CFET)” was published by researchers at National Yang Ming Chiao Tung University. “This work ...
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