Mouser Electronics announces a new Interactive eBook in collaboration with Renesas Electronics that explores how data centres ...
Mouser Electronics has announced a new Interactive Ebook in collaboration with Renesas Electronics that explores how data ...
The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power electronics. The EPC2366 showcases our ongoing commitment to help engineers ...
The new modules feature Vishay’s latest generation silicon carbide (SiC) MOSFETs in the industry-standard SOT-227 package, targeting automotive, energy, industrial, and telecom systems. The ...
Abstract: The feedback from the drain to the gate of MOSFET resp. from the collector to the gate of an IGBT during switching transients is described by the miller-capacitance. This is an appropriate ...
Abstract: In power electronics there is a general trend to increase converters efficiencies and power densities; for this reason new power semiconductors based on materials such as Silicon Carbide ...
V MOSFET power modules developed to increase power efficiency for medium to high frequency applications in automotive, energy, industrial, and telecom systems. The Vishay Semiconductors VS-SF50LA120, ...
MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) on Monday unveiled five new 1200-volt silicon carbide power modules designed to drive higher efficiency and lower losses in demanding automotive, ...
Infineon says its silicon carbide power semiconductors have been selected for Toyota’s new bZ4X battery-electric vehicle.
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